Freescale Semiconductor
Technical Data
Document Number: MRF6S18140H
Rev. 1.1, 12/2009
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for N-CDMA base station applications with frequencies from 1805
to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica‐
tions. To be used in Class AB for PCN- PCS/cellular radio and WLL applica‐
tions.
•
Typical 2-Carrier N-CDMA Performance: V
DD
= 28 Volts, I
DQ
= 1200 mA,
P
out
= 29 Watts Avg., f = 1877.5 MHz, IS-95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 27.5%
IM3 @ 2.5 MHz Offset — -36 dBc in 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — -50.5 dBc in 30 kHz Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1840 MHz, 140 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large-Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S18140HR3
MRF6S18140HSR3
ARCHIVE INFORMATION
CASE 465B-03, STYLE 1
NI-880
MRF6S18140HR3
CASE 465C-02, STYLE 1
NI-880S
MRF6S18140HSR3
Table 1. Maximum Ratings
Rating
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
-0.5, +68
-0.5, +12
-65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 140 W CW
Case Temperature 73°C, 29 W CW
Symbol
R
θJC
0.31
0.35
Value
(2,3)
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2006, 2008-2009. All rights reserved.
MRF6S18140HR3 MRF6S18140HSR3
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
1805-1880 MHz, 29 W AVG., 28 V
2 x N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
ARCHIVE INFORMATION
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 1200 mAdc, Measured in Functional Test)
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 3 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
C
oss
—
—
2.2
685
—
—
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1.2
2
0.1
2
2.7
0.22
2.7
3.8
0.3
Vdc
Vdc
Vdc
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1200 mA, P
out
= 29 W Avg., f1 = 1877.5 MHz, f2 =
1880 MHz, 2-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @
±885
kHz
Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @
±2.5
MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
G
ps
η
D
IM3
ACPR
IRL
15
25.5
—
—
—
16
27.5
-36
-50.5
-10.5
18
—
-34.5
-48
—
dB
%
dBc
dBc
dB
MRF6S18140HR3 MRF6S18140HSR3
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
V
SUPPLY
+
R3
V
BIAS
+
C8
R5
C4
R1
C6
Z18
RF
INPUT
Z14
Z1
Z2
Z3
Z4
Z5
Z6
C1
Z15
R4
+
B2
R2
C5
C7
C3
C11
C14
C15
Z7
Z8
Z9
Z10 Z11 Z12
Z13
Z17
DUT
C2
Z16
Z19 Z20 Z21 Z22
RF
OUTPUT
Z23
B1
C10
C12
C13
C16
ARCHIVE INFORMATION
C9
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
0.166″ x 0.082″ Microstrip
0.250″ x 0.334″ Microstrip
0.140″ x 0.340″ Microstrip
0.092″ x 0.164″ Microstrip
0.130″ x 0.234″ Microstrip
0.109″ x 0.082″ Microstrip
0.070″ x 0.082″ Microstrip
0.350″ x 0.644″ Microstrip
0.092″ x 0.420″ Microstrip
0.720″ x 0.082″ Microstrip
0.090″ x 0.485″ x 0.580″ Taper
0.342″ x 1.070″ Microstrip
Z13
Z14
Z15
Z16
Z17
Z18
Z19
Z20
Z21
Z22
Z23
PCB
0.108″ x 1.070″ Microstrip
0.960″ x 0.046″ Microstrip
0.084″ x 0.046″ Microstrip
0.996″ x 0.080″ Microstrip
1.015″ x 0.080″ Microstrip
0.099″ x 1.070″ Microstrip
0.516″ x 1.070″ Microstrip
0.292″ x 0.288″ Microstrip
0.198″ x 0.114″ Microstrip
0.372″ x 0.080″ Microstrip
1.181″ x 0.080″ Microstrip
DS Electronics GX0300, 0.030″,
ε
r
= 2.55
Figure 1. MRF6S18140HR3(HSR3) Test Circuit Schematic
Table 5. MRF6S18140HR3(HSR3) Test Circuit Component Designations and Values
Part
B1, B2
C1, C2
C3
C4, C5, C12, C13,
C14, C15
C6, C7, C10, C11
C8, C9
C16
R1, R2
R3, R4
R5, R6
Description
47
Ω,
100 MHz Small Ferrite Beads, Surface Mount
39 pF Chip Capacitors
0.1 pF Chip Capacitor
10
μF,
50 V Chip Capacitors
9.1 pF Chip Capacitors
47
μF,
50 V Electrolytic Capacitors
470
μF,
63 V Electrolytic Capacitor
12
Ω,
1/4 W Resistors
1.0 KΩ, 1/4 W Resistors
560 KΩ, 1/4 W Chip Resistors
Part Number
2743019447
ATC700B390FT500XT
ATC100B0R1BT500XT
GRM55DR61H106KA88B
ATC100B9R1BT500XT
EMVY500ADA470MF80G
EMVY630GTR471MMH0S
CRCW120612R0FKEA
CRCW12061001FKEA
CRCW12065602FKEA
Manufacturer
Fair-Rite
ATC
ATC
Murata
ATC
Nippon Chemi-Con
Nippon Chemi-Con
Vishay
Vishay
Vishay
MRF6S18140HR3 MRF6S18140HSR3
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
R6
C10
R3
C8
+
B1 R1
C6
C12 C13
C16
R5
C4
C1
C2
CUT OUT AREA
ARCHIVE INFORMATION
R6
C5
+
C9
R4
B2
MRF6S18140H/HS
Rev. 1
R2
C7
C3
C14 C15
C11
Figure 2. MRF6S18140HR3(HSR3) Test Circuit Component Layout
MRF6S18140HR3 MRF6S18140HSR3
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
16.8
16.6
16.4
G
ps
, POWER GAIN (dB)
16.2
16
15.8
15.6
15.4
15.2
15
14.8
1760
ACPR
1780
1800
1820
1840
1860
1880
1900
IRL
G
ps
V
DD
= 28 Vdc, P
out
= 29 W (Avg.)
I
DQ
= 1200 mA, 2-Carrier N-CDMA
2.5 MHz Carrier Spacing, 1.2288 MHz
Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
IM3
η
D
30
29
28
27
26
IM3 (dBc), ACPR (dBc)
-24
-30
-36
-42
-48
-54
1920
0
-4
-8
-12
-16
-20
ARCHIVE INFORMATION
IRL, INPUT RETURN LOSS (dB)
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Broadband Performance @ P
out
= 29 Watts Avg.
16.4
16.2
16
G
ps
, POWER GAIN (dB)
15.8
15.6
15.4
15.2
15
14.8
14.6
14.4
1760
IRL
ACPR
1780
1800
1820
1840
1860
1880
1900
IM3
G
ps
V
DD
= 28 Vdc, P
out
= 60 W (Avg.)
I
DQ
= 1200 mA, 2-Carrier N-CDMA
2.5 MHz Carrier Spacing, 1.2288 MHz
Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
η
D
42
41
40
39
38
IM3 (dBc), ACPR (dBc)
-12
-18
-24
-30
-36
-42
1920
0
-4
-8
-12
-16
-20
f, FREQUENCY (MHz)
Figure 4. 2-Carrier N-CDMA Broadband Performance @ P
out
= 60 Watts Avg.
19
18
G
ps
, POWER GAIN (dB)
17
16
900 mA
15
14 600 mA
13
1
10
100
400
P
out
, OUTPUT POWER (WATTS) PEP
V
DD
= 28 Vdc
f1 = 1838.75 MHz, f2 = 1841.25 MHz
Two-Tone Measurements, 2.5 MHz Tone Spacing
I
DQ
= 1800 mA
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
-1 0
V
DD
= 28 Vdc
f1 = 1838.75 MHz, f2 = 1841.25 MHz
Two-Tone Measurements, 2.5 MHz Tone Spacing
-2 0
1500 mA
1200 mA
-3 0
I
DQ
= 600 mA
-4 0
1800 mA
-5 0
900 mA
-60
1
10
1200 mA
1500 mA
100
400
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Two-T one Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S18140HR3 MRF6S18140HSR3
RF Device Data
Freescale Semiconductor
5
ARCHIVE INFORMATION
η
D
, DRAIN
EFFICIENCY (%)
IRL, INPUT RETURN LOSS (dB)
